Synthesis of thienopyrazine‐ and cyclofluorene–thiophene‐based donor–acceptor low‐band gap polymers and their application in memory devices

Abstract Low‐band gap semiconductor polymer materials play a crucial role in the field of organic optoelectronics. In this context, a series of low‐band gap polymers containing thienopyrazine as the acceptor and cyclofluorene–bithiophene as the donor were synthesized and utilized in resistive random...

Full description

Saved in:
Bibliographic Details
Published inJournal of applied polymer science Vol. 141; no. 39
Main Authors Mei, Binhua, Bai, Ju, Zhang, Yuhang, Ma, Yang, Hou, Yanjun, Wang, Shuhong, Wang, Cheng
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc 15.10.2024
Subjects
Chemical synthesis
Flash memory (computers)
Memory devices
Optoelectronics
Photoelectric effect
Photoelectricity
Photonic band gaps
Polymers
Random access memory
Online AccessGet full text

Cover

More Information
Summary:Abstract Low‐band gap semiconductor polymer materials play a crucial role in the field of organic optoelectronics. In this context, a series of low‐band gap polymers containing thienopyrazine as the acceptor and cyclofluorene–bithiophene as the donor were synthesized and utilized in resistive random access memory (RRAM) devices. These memory devices consistently exhibit nonvolatile flash memory behavior. Remarkably, all three polymers demonstrate stability even after 1000 cycles without significant fluctuations. Notably, the three polymer‐based devices also exhibit excellent ternary memory performance, with current ratios of 1:10 2.8 :10 4 , 1:10 1.3 :10 3.9 , and 1:10 1.8 :10 3.6 . Furthermore, the photoelectric properties of the three polymers and the conduction mechanisms of the memory devices were thoroughly discussed.
ISSN:0021-8995
1097-4628
DOI:10.1002/app.55998