Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs₂SnI₆ Thin Film for Low-Power ReRAM

• Published in: IEEE transactions on electron devices Vol. 71; no. 10; pp. 5997 - 6002
• Main Authors: Kumar, Manoj, Sharma, Harshit, Srivastava, Ritu, Kumar, Sushil
• Format: Journal Article
• Language: English
• Published: IEEE 01.10.2024
• Subjects: All inorganic lead-free perovskite; Cs₂SnI; Indium tin oxide; Lead; low-powered electronic devices; Memristors; Perovskites; resistive random access memories (ReRAM); resistive switching (RS); Substrates; Voltage; Voltage measurement
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2024.3445311

Recent advancement in the artificial intelligence and surge in the availability of complex information have accelerated the exploration of advanced information processing and storage devices. Perovskite-based synapses for memristor application have immense potential to imitate the biological synapses. Herein, all inorganic lead-free Cs 2 SnI 6 perovskite is synthesized using CsI and SnI 2 as precursors by solution process. Cs 2 SnI 6 perovskite-based memristors with Al/Cs 2 SnI 6 /ITO configuration is investigated for resistive random access memories (ReRAMs). A model to comprehend the resistive switching (RS) behavior is proposed based on intrinsic defects properties and their migration resulting into the conducting path. Al/Cs 2 SnI 6 /ITO memristor exhibits the low set voltage and reset voltage with the compliance current of ~10 −4 A that signifies the low-power (~10 −4 W) consumption in ReRAM devices. Also, high-resistance state (HRS)/low-resistance state (LRS) ratio, endurance, and retention are found to be ≥10, upto 160 cycles, and 10 4 s. The present investigation explores the environment friendly all inorganic lead-free Cs 2 SnI 6 perovskite for low-power ReRAM.