New Subject Heading on "Memory Devices and Technology"

• Published in: IEEE electron device letters Vol. 33; no. 9; p. 1221
• Main Authors: Cressler, John D., Chatterjee, Amitava
• Format: Journal Article
• Language: English
• Published: IEEE 01.09.2012
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2210471

Summary form only given, as follows. The editorial boards of both IEEE Transactions on Electron Devices (T-ED) and IEEE Electron Device Letters (EDL) have recently taken note of a substantial increase in research activity and manuscript submissions related to "memory." In recognition of this important new trend and, in order to best serve the Electron Devices Society community, we announce the formation of a "Memory Devices and Technology" category within both T-ED and EDL, with specific editors assigned to this topic. The general context of "memory" is changing rapidly, evolving from more "classical" planar, transistor-based memory (e.g., DRAM, SRAM, Flash-NOR/NAND), to non-planar, 3-D structures (e.g., recessed select devices and FinFETs), to more novel device structures and the use of new materials (e.g., cross-point resis- Digital Object Identifier 10.1109/LED.2012.2210471 tive memory, stacked device structures, chalcogenides, ferroelectrics, and metal oxides), to even innovative applications of new phenomena (e.g., ion/atom transport and spin polarization). The "Memory Devices and Technology" category covering memory devices as well as the related materials and fabrication techniques, will begin with the September issue.