Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

Saved in:
Bibliographic Details
Published inSoviet Physics Journal Vol. 33; no. 6; pp. 491 - 494
Main Authors Bobrovnikova, I. A., Vilisova, M. D., Porokhovnichenko, L. P., Ruzaikin, M. P., Ryazanov, V. N.
Format Journal Article
LanguageEnglish
Published 01.06.1990
Online AccessGet full text

Cover

More Information
ISSN:0038-5697
1573-9228
DOI:10.1007/BF01325005