Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-µm Design Rule

Sequential single-oriented growth of a (111)Al/(111)ZrN/(002)Zr trilayered film could be realized on (001)Si, when a ZrN(200 Å)/Zr(200 Å) bilayered film was interposed between Al and Si. It was revealed that the system tolerated thermal treatment at 400°C, while maintaining a ZrSi 2 region with the...

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Published inJapanese Journal of Applied Physics Vol. 40; no. 6R; p. 4193
Main Authors Hidekazu Miyake, Hidekazu Miyake, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Satoko Shinkai, Satoko Shinkai, Yoshio Abe, Yoshio Abe
Format Journal Article
LanguageEnglish
Published 01.06.2001
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Summary:Sequential single-oriented growth of a (111)Al/(111)ZrN/(002)Zr trilayered film could be realized on (001)Si, when a ZrN(200 Å)/Zr(200 Å) bilayered film was interposed between Al and Si. It was revealed that the system tolerated thermal treatment at 400°C, while maintaining a ZrSi 2 region with the lowest contact resistivity at the Si interface and the single-oriented state of (111)Al overlayer. Therefore, it is concluded that the interposition of a ZrN/Zr bilayered film, which is applicable to the sub-0.25-µm design rule, is useful for realizing a highly reliable contact system.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.4193