A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H 2 /SiH 4

The relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using H 2 /SiH 4 has been investigated. The properties of amorphous silicon films were improved with increasing deposition rate; ph...

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Published inJapanese Journal of Applied Physics Vol. 36; no. 8A; p. L986
Main Authors Moonsang Kang, Moonsang Kang, Jaeyeong Kim, Jaeyeong Kim, Taehoon Lim, Taehoon Lim, Inhwan Oh, Inhwan Oh, Bupju Jeon, Bupju Jeon, Ilhyun Jung, Ilhyun Jung, Chul An, Chul An
Format Journal Article
LanguageEnglish
Published 01.08.1997
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Summary:The relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using H 2 /SiH 4 has been investigated. The properties of amorphous silicon films were improved with increasing deposition rate; photoconductivity increased and optical band gap, full width at half maximum and the ratio of the concentration of dihydride to that of monohydride decreased. The high deposition rate was a very important factor to obtain high quality amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H 2 /SiH 4 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.L986