Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon

The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11B+ ions over a wide range of fluence (4×1013– 3×101611B/cm2) and energy (300eV–10keV) for evaluation. The techniques used in th...

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Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 243; no. 1; pp. 205 - 210
Main Authors Duggan, J.L., Naab, F., Hossain, K., Holland, O.W., McDaniel, F.D., Xu, J.J., Zhao, Z.Y., Guo, B.N., Liu, J., Shim, K.H., Jeong, U.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.2006
Subjects
Boron fluence/profile measurements
Elastic recoil detection analysis (ERDA)
Nuclear reaction analysis (NRA)
Secondary ion mass spectroscopy (SIMS)
Boron fluence/profile measurements
68.49.Sf
Nuclear reaction analysis (NRA)
61.18.Bn
Elastic recoil detection analysis (ERDA)
Secondary ion mass spectroscopy (SIMS)
61.72.Ss
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Abstract The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11B+ ions over a wide range of fluence (4×1013– 3×101611B/cm2) and energy (300eV–10keV) for evaluation. The techniques used in this evaluation included the following: Elastic recoil detection (ERD) using 12MeV F4+ ions, nuclear reaction analysis (NRA) using the 11B(p,α)8Be* reaction and secondary ion mass spectroscopy (SIMS). The accuracy and potential drawbacks of each of these techniques is discussed.
AbstractList The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11B+ ions over a wide range of fluence (4×1013– 3×101611B/cm2) and energy (300eV–10keV) for evaluation. The techniques used in this evaluation included the following: Elastic recoil detection (ERD) using 12MeV F4+ ions, nuclear reaction analysis (NRA) using the 11B(p,α)8Be* reaction and secondary ion mass spectroscopy (SIMS). The accuracy and potential drawbacks of each of these techniques is discussed.
Author McDaniel, F.D.
Xu, J.J.
Naab, F.
Holland, O.W.
Liu, J.
Duggan, J.L.
Shim, K.H.
Hossain, K.
Jeong, U.
Zhao, Z.Y.
Guo, B.N.
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Keywords Boron fluence/profile measurements
68.49.Sf
Nuclear reaction analysis (NRA)
61.18.Bn
Elastic recoil detection analysis (ERDA)
Secondary ion mass spectroscopy (SIMS)
61.72.Ss
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Snippet The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers...
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SubjectTerms Boron fluence/profile measurements
Elastic recoil detection analysis (ERDA)
Nuclear reaction analysis (NRA)
Secondary ion mass spectroscopy (SIMS)
Title Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon
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