Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 243; no. 1; pp. 205 - 210
• Main Authors: Duggan, J.L., Naab, F., Hossain, K., Holland, O.W., McDaniel, F.D., Xu, J.J., Zhao, Z.Y., Guo, B.N., Liu, J., Shim, K.H., Jeong, U.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2006
• Subjects: Boron fluence/profile measurements; Elastic recoil detection analysis (ERDA); Nuclear reaction analysis (NRA); Secondary ion mass spectroscopy (SIMS); Boron fluence/profile measurements; 68.49.Sf; Nuclear reaction analysis (NRA); 61.18.Bn; Elastic recoil detection analysis (ERDA); Secondary ion mass spectroscopy (SIMS); 61.72.Ss
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2005.07.239

The concentration of 11B+ in silicon has been determined by a number of different analytical techniques. Several commercial vendors provided silicon wafers implanted with 11B+ ions over a wide range of fluence (4×1013– 3×101611B/cm2) and energy (300eV–10keV) for evaluation. The techniques used in this evaluation included the following: Elastic recoil detection (ERD) using 12MeV F4+ ions, nuclear reaction analysis (NRA) using the 11B(p,α)8Be* reaction and secondary ion mass spectroscopy (SIMS). The accuracy and potential drawbacks of each of these techniques is discussed.