Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories
Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to b...
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Published in | Nanotechnology Vol. 31; no. 44; p. 445205 |
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Main Authors | , , , , , |
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Language | English |
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Abstract | Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered to adopt these devices as building blocks enabling large-scale quantum technologies via quantum-classical electronics co-integration. This study demonstrates multilevel switching at 1.5 K of Al
O
/TiO
resistive memory devices fabricated with complementary metal-oxide-semiconducto-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-heating-induced metal-insulator transition of the Ti
O
conductive filament. Carrier transport analysis of all multilevel switching I-V curves show that while the insulating regime follows the space charge limited current (SCLC) model for all resistance states, the conduction in the metallic regime is dominated by SCLC and trap-assisted tunneling for low- and high-resistance states respectively. A non-monotonic conductance evolution is observed in the insulating regime, as opposed to the continuous and gradual conductance increase and decrease obtained in the metallic regime during the multilevel SET and RESET operations. Cryogenic transport analysis coupled to an analytical model accounting for the metal-insulator-transition-induced NDR effects and the resistance states of the device provide new insights on the conductive filament evolution dynamics and resistive switching mechanisms. Our findings suggest that the non-monotonic conductance evolution in the insulating regime is due to the combined effects of longitudinal and radial variations of the Ti
O
conductive filament during the switching. This behavior results from the interplay between temperature- and field-dependent geometrical and physical characteristics of the filament. |
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AbstractList | Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered to adopt these devices as building blocks enabling large-scale quantum technologies via quantum–classical electronics co-integration. This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with complementary metal-oxide-semiconducto-compatible processes and materials. The I–V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-heating-induced metal-insulator transition of the Ti4O7 conductive filament. Carrier transport analysis of all multilevel switching I–V curves show that while the insulating regime follows the space charge limited current (SCLC) model for all resistance states, the conduction in the metallic regime is dominated by SCLC and trap-assisted tunneling for low- and high-resistance states respectively. A non-monotonic conductance evolution is observed in the insulating regime, as opposed to the continuous and gradual conductance increase and decrease obtained in the metallic regime during the multilevel SET and RESET operations. Cryogenic transport analysis coupled to an analytical model accounting for the metal-insulator-transition-induced NDR effects and the resistance states of the device provide new insights on the conductive filament evolution dynamics and resistive switching mechanisms. Our findings suggest that the non-monotonic conductance evolution in the insulating regime is due to the combined effects of longitudinal and radial variations of the Ti4O7 conductive filament during the switching. This behavior results from the interplay between temperature- and field-dependent geometrical and physical characteristics of the filament. Abstract Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered to adopt these devices as building blocks enabling large-scale quantum technologies via quantum–classical electronics co-integration. This study demonstrates multilevel switching at 1.5 K of Al 2 O 3 /TiO 2- x resistive memory devices fabricated with complementary metal-oxide-semiconducto-compatible processes and materials. The I – V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-heating-induced metal-insulator transition of the Ti 4 O 7 conductive filament. Carrier transport analysis of all multilevel switching I – V curves show that while the insulating regime follows the space charge limited current (SCLC) model for all resistance states, the conduction in the metallic regime is dominated by SCLC and trap-assisted tunneling for low- and high-resistance states respectively. A non-monotonic conductance evolution is observed in the insulating regime, as opposed to the continuous and gradual conductance increase and decrease obtained in the metallic regime during the multilevel SET and RESET operations. Cryogenic transport analysis coupled to an analytical model accounting for the metal-insulator-transition-induced NDR effects and the resistance states of the device provide new insights on the conductive filament evolution dynamics and resistive switching mechanisms. Our findings suggest that the non-monotonic conductance evolution in the insulating regime is due to the combined effects of longitudinal and radial variations of the Ti 4 O 7 conductive filament during the switching. This behavior results from the interplay between temperature- and field-dependent geometrical and physical characteristics of the filament. Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered to adopt these devices as building blocks enabling large-scale quantum technologies via quantum-classical electronics co-integration. This study demonstrates multilevel switching at 1.5 K of Al O /TiO resistive memory devices fabricated with complementary metal-oxide-semiconducto-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-heating-induced metal-insulator transition of the Ti O conductive filament. Carrier transport analysis of all multilevel switching I-V curves show that while the insulating regime follows the space charge limited current (SCLC) model for all resistance states, the conduction in the metallic regime is dominated by SCLC and trap-assisted tunneling for low- and high-resistance states respectively. A non-monotonic conductance evolution is observed in the insulating regime, as opposed to the continuous and gradual conductance increase and decrease obtained in the metallic regime during the multilevel SET and RESET operations. Cryogenic transport analysis coupled to an analytical model accounting for the metal-insulator-transition-induced NDR effects and the resistance states of the device provide new insights on the conductive filament evolution dynamics and resistive switching mechanisms. Our findings suggest that the non-monotonic conductance evolution in the insulating regime is due to the combined effects of longitudinal and radial variations of the Ti O conductive filament during the switching. This behavior results from the interplay between temperature- and field-dependent geometrical and physical characteristics of the filament. |
Author | Paquette, François Alibart, Fabien Brousseau, Frédéric Drouin, Dominique Beilliard, Yann Ecoffey, Serge |
Author_xml | – sequence: 1 givenname: Yann orcidid: 0000-0003-0311-8840 surname: Beilliard fullname: Beilliard, Yann organization: Institut Quantique (IQ), Université de Sherbrooke, Sherbrooke J1K 2R1, Canada – sequence: 2 givenname: François surname: Paquette fullname: Paquette, François organization: Laboratoire Nanotechnologies Nanosystèmes (LN2) - CNRS UMI-3463 - 3IT, CNRS, Sherbrooke J1K 0A5, Canada – sequence: 3 givenname: Frédéric surname: Brousseau fullname: Brousseau, Frédéric organization: Laboratoire Nanotechnologies Nanosystèmes (LN2) - CNRS UMI-3463 - 3IT, CNRS, Sherbrooke J1K 0A5, Canada – sequence: 4 givenname: Serge surname: Ecoffey fullname: Ecoffey, Serge organization: Laboratoire Nanotechnologies Nanosystèmes (LN2) - CNRS UMI-3463 - 3IT, CNRS, Sherbrooke J1K 0A5, Canada – sequence: 5 givenname: Fabien surname: Alibart fullname: Alibart, Fabien organization: Institute of Electronics, Microelectronics and Nanotechnology (IEMN), Université de Lille, 59650, Villeneuve d'Ascq, France – sequence: 6 givenname: Dominique surname: Drouin fullname: Drouin, Dominique organization: Institut Quantique (IQ), Université de Sherbrooke, Sherbrooke J1K 2R1, Canada |
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Keywords | multilevel switching Al2O3/TiO2-x memristor cryogenic electronics metal-insulator transition |
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Snippet | Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above,... Abstract Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and... |
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Title | Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories |
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