Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories

Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to b...

Full description

Saved in:
Bibliographic Details
Published inNanotechnology Vol. 31; no. 44; p. 445205
Main Authors Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique
Format Journal Article
LanguageEnglish
Published England Institute of Physics 30.10.2020
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:Non-volatile resistive switching devices are considered as prime candidates for next-generation memory applications operating at room temperature and above, such as resistive random-access memories or brain-inspired in-memory computing. However, their operability in cryogenic conditions remains to be mastered to adopt these devices as building blocks enabling large-scale quantum technologies via quantum-classical electronics co-integration. This study demonstrates multilevel switching at 1.5 K of Al O /TiO resistive memory devices fabricated with complementary metal-oxide-semiconducto-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a Joule-heating-induced metal-insulator transition of the Ti O conductive filament. Carrier transport analysis of all multilevel switching I-V curves show that while the insulating regime follows the space charge limited current (SCLC) model for all resistance states, the conduction in the metallic regime is dominated by SCLC and trap-assisted tunneling for low- and high-resistance states respectively. A non-monotonic conductance evolution is observed in the insulating regime, as opposed to the continuous and gradual conductance increase and decrease obtained in the metallic regime during the multilevel SET and RESET operations. Cryogenic transport analysis coupled to an analytical model accounting for the metal-insulator-transition-induced NDR effects and the resistance states of the device provide new insights on the conductive filament evolution dynamics and resistive switching mechanisms. Our findings suggest that the non-monotonic conductance evolution in the insulating regime is due to the combined effects of longitudinal and radial variations of the Ti O conductive filament during the switching. This behavior results from the interplay between temperature- and field-dependent geometrical and physical characteristics of the filament.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/aba6b4