Publisher's Note: “A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics”

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 51; no. 7R; p. 79202
Main Authors Kang, Ey Goo, Moon, Seung Hyun, Sung, Man Young
Format Journal Article
LanguageEnglish
Japanese
Published 01.07.2012
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.51.079202