Reduction of deep levels in MOCVD-regrown AlxGa1−x as interfaces by (NH4)2S passivation and in-situ HCl etching

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Bibliographic Details
Published inJournal of electronic materials Vol. 21; no. 11; pp. 1051 - 1056
Main Authors Guel, G., Armour, E. A., Sun, S. Z., Srinivasan, S. T., Malloy, K. J., Hersee, S. D.
Format Journal Article
LanguageEnglish
Published 01.11.1992
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF02665883