Flexible High Mobility Pentacene Transistor with High-k/low-k Double Polymer Dielectric Layer Operating at -5 V

• Published in: ECS transactions Vol. 16; no. 9; pp. 239 - 247
• Main Authors: Lee, Kwang H., Lee, Kimoon, Lee, GyuBaek, Oh, Min Suk, Choi, Jeong-M., Im, Seongil, Jang, Sungjin, Kim, Eugene
• Format: Journal Article
• Language: English
• Published: 2009
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.2980558

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with double polymer dielectric composed of 30 / 45 nm-thin low-k poly-4-vinyphenol (PVP) and 110 nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] dielectric on polyethersulfone (PES) films. Our 140 and 155 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of 1 and 1.5 MV/cm, a high capacitance of 31 ~ 34 and 27 nF/cm2 with k = ~ 5, respectively. Based on 140 and 155 nm-thick double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.39 and 1.23 cm2/V s, a threshold voltage of -2.3 and -2.0 V, respectively, and on/off ratio of 103, stably operating under -5 V.