Development of 300mm MOCVD HfSiOx Process

This paper reports on the development of a 300mm MOCVD HfSiOx process. Alkylamido Hf and Si are used as precursors for HfSiOx deposition. A Design of Experiments (DOE) approach is applied to explore the effects of the precursor ratio and deposition pressure on the film composition. A wide process wi...

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Bibliographic Details
Published inECS transactions Vol. 3; no. 3; pp. 417 - 424
Main Authors Shi, Xiaoping, Schaekers, Marc, Date, Lucien, Rothschild, Aude, Everaert, Jean-Luc, Van Elshocht, Sven, Rosseel, Erik, Kher, Shreyas
Format Journal Article
LanguageEnglish
Published 20.10.2006
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Summary:This paper reports on the development of a 300mm MOCVD HfSiOx process. Alkylamido Hf and Si are used as precursors for HfSiOx deposition. A Design of Experiments (DOE) approach is applied to explore the effects of the precursor ratio and deposition pressure on the film composition. A wide process window from 20 to 80% Hf concentration range for deposited HfSiOx was targeted for the process optimization. Furthermore the process is optimized towards growth rate, uniformity, process stability. It is found out that the deposition rate and the process pressure have a significant impact on the HfSiOx layer within wafer uniformity. The results of a process monitoring over 50 days with a recipe of 50% Hf concentration show a very good stability for film thickness, film uniformity and Hf concentration as well.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355730