Characterization of Ge Implanted with Ni and Hf Ions

In this paper, we report the results of a study aimed at assessing the influence of Hf and Ni contamination on the electrical properties of Ge. Hf and Ni were implanted in n-type Ge wafers that were subsequently annealed and characterized by several techniques (SIMS, ToFSIMS, TEM, DLTS, MCLT). It is...

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Published inECS transactions Vol. 3; no. 7; pp. 1109 - 1119
Main Authors Sioncke, Sonja, Simoen, Eddy R., Janssens, Tom, Meuris, Marc M., Mertens, Paul W., Forment, Stefaan, Clauws, Paul, Theuwis, Antoon
Format Journal Article
LanguageEnglish
Published 20.10.2006
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Summary:In this paper, we report the results of a study aimed at assessing the influence of Hf and Ni contamination on the electrical properties of Ge. Hf and Ni were implanted in n-type Ge wafers that were subsequently annealed and characterized by several techniques (SIMS, ToFSIMS, TEM, DLTS, MCLT). It is shown that the minority carrier lifetime is drastically reduced by Ni contamination. Also, the presence of Hf introduces deep levels. However, we cannot assign the reduction in minority carrier lifetime unambiguously to the Hf contamination due to contamination issues during the annealing step.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355905