(Invited) Ultralow-Voltage Design and Technology of Silicon-on Thin-Buried-Oxide (SOTB) CMOS for High Energy Efficient Electronics in IoT Era

We demonstrated ultralow voltage (<0.4V) operation of Silicon-on-Thin-Buried-oxide (SOTB) CMOS. Thanks to the small variability of SOTB Vmin of SRAM was lowered down to <0.4 V. Both fast access time and small standby leakage were achieved by adaptive back biasing (ABB). 32-bit RISC CPU operate...

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Bibliographic Details
Published inECS transactions Vol. 66; no. 5; pp. 43 - 48
Main Authors Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Yamaguchi, Yasuo, Mizutani, Tomoko, Kobayashi, Masaharu, Hiramoto, Toshiro
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 27.03.2015
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Summary:We demonstrated ultralow voltage (<0.4V) operation of Silicon-on-Thin-Buried-oxide (SOTB) CMOS. Thanks to the small variability of SOTB Vmin of SRAM was lowered down to <0.4 V. Both fast access time and small standby leakage were achieved by adaptive back biasing (ABB). 32-bit RISC CPU operated at ultralow energy consumption of 13.4 pJ.
ISSN:1938-5862
1938-6737
DOI:10.1149/06605.0043ecst