GaN-based quantum dot infrared photodetector operating at 1.38 [micro sign]m

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Bibliographic Details
Published inElectronics letters Vol. 41; no. 19; p. 1077
Main Authors Doyennette, L., Nevou, L., Tchernycheva, M., Lupu, A., Guillot, F., Monroy, E., Colombelli, R., Julien, F.H.
Format Journal Article
LanguageEnglish
Japanese
Published 2005
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ISSN:0013-5194
DOI:10.1049/el:20052598