1.3-μm 1 × 4 MMI coupler based on shallow-etched InP ridge waveguides

1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler...

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Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 2; pp. 82 - 85
Main Author 郭菲 陆丹 张瑞康 王宝军 张希林 吉晨
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
InP衬底
MMI
优化性能
刻蚀
弯曲波导
波导结构
耦合器
脊波导
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ISSN1674-4926
DOI10.1088/1674-4926/35/2/024012

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Summary:1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.
Bibliography:11-5781/TN
1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.
MMI; shallow etched waveguide; beam propagation method
ISSN:1674-4926
DOI:10.1088/1674-4926/35/2/024012