Single-mode InAsSb/InAsSbP laser (λ≈3.2 μm) Tunable over 100 Å

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Bibliographic Details
Published in	Semiconductors (Woodbury, N.Y.) Vol. 34; no. 2; pp. 237 - 242
Main Authors	Danilova, A. P., Imenkov, A. N., Kolchanova, N. M., Civis, S., Sherstnev, V. V., Yakovlev, Yu. P.
Format	Journal Article
Language	English
Published	01.02.2000
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ISSN:	1063-7826 1090-6479
DOI:	10.1134/1.1187939