Over 1000V/30mA operation GaN-on-Si MOSFETs fabricated on Si substrates

We demonstrated the operation of GaN-on-Si metal–oxide–semiconductor field effect transistors (MOSFETs) for power electronics components. The interface states at SiO2/GaN were successfully improved by annealing at 800°C for 30min in N2 ambient. The interface state density was less than 1×1011cm–2eV−...

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Bibliographic Details
Published inSolid-state electronics Vol. 56; no. 1; pp. 73 - 78
Main Authors Niiyama, Yuki, Li, Zhongda, Paul Chow, T., Li, Jiang, Nomura, Takehiko, Kato, Sadahiro
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.02.2011
Subjects
GaN-on-Si
Ion implantation
MOSFETs
Power devices
RESURF
GaN-on-Si
RESURF
Ion implantation
Power devices
MOSFETs
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Summary:We demonstrated the operation of GaN-on-Si metal–oxide–semiconductor field effect transistors (MOSFETs) for power electronics components. The interface states at SiO2/GaN were successfully improved by annealing at 800°C for 30min in N2 ambient. The interface state density was less than 1×1011cm–2eV−1 at Ec−0.4eV. The n+ contact layers as the source and drain regions as well as the reduced surface field (RESURF) zone were formed using a Si ion implantation technique with the activation annealing at 1200°C for 10s in rapid thermal annealing (RTA). As a result, we achieved an over 1000V and 30mA operation on GaN-on-Si MOSFETs. The threshold voltage was +2.6V. It was found that the breakdown voltage depended upon the RESURF length and nitride based epi-layer thickness. In addition, we discussed the comparison of each performance of GaN-on-Si with -sapphire devices.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2010.10.002