Full reliability study of advanced metallization options for 30nm ½pitch interconnects

Different metallization options that allow filling 30nm ½pitch interconnect trenches have been explored and their full reliability performance has been benchmarked to conventional PVD TaNTa/PVD Cu seed based metallizations. CVD Co as seed enhancement layer shows no deterioration in barrier performan...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronic engineering Vol. 106; pp. 210 - 213
Main Authors Croes, Kristof, Demuynck, Steven, Siew, Yong Kong, Pantouvaki, Marianna, Wilson, Christopher J., Heylen, Nancy, Beyer, Gerald P., Tőkei, Zsolt
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2013
Subjects
BEOL
Electromigration
Metallization
Reliability
TDDB
Electromigration
TDDB
Metallization
Reliability
BEOL
Online AccessGet full text

Cover

More Information
Summary:Different metallization options that allow filling 30nm ½pitch interconnect trenches have been explored and their full reliability performance has been benchmarked to conventional PVD TaNTa/PVD Cu seed based metallizations. CVD Co as seed enhancement layer shows no deterioration in barrier performance and improved electromigration performance, but the activation energy for electromigration was 0.68±0.20eV, which is at the lower end of the expected value of 0.85–0.95eV for this parameter. When integrating our trenches in a k=3.2 non-porous SiCOH low-k material, PVD RuTa barriers with 90%Ru and 10%Ta show degraded barrier performance and significant lowering of activation energy for electromigration (0.59±0.05eV) while when using SiO2 as intermetal dielectric, no significant reliability deterioration is observed. Finally, it is shown that, using an optimized PVD Cu seed, standard PVD TaNTa-barriers give excellent barrier performance and that typical electromigration lifetime specs can be met with this metallization scheme down to 30nm ½pitch.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2013.01.002