A 230MHz CMOS-MEMS bulk acoustic wave resonator

[Display omitted] ► In this study the design, fabrication and characterization of a bulk acoustic mode resonator at VHF band is presented. ► The CMOS-MEMS resonator is fabricated using the polysilicon layer of a standard CMOS technology (AMS 0.35μm). ► The resonator is electrostatically actuated and...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 98; pp. 458 - 462
Main Authors Ferrer, Eloi Marigó, Muñoz-Gamarra, J.L., Giner, J., Uranga, A., Barniol, N.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.10.2012
Subjects
Bulk acoustic resonator
Capacitive sensing
CMOS-MEMS
Piezoresistive sensing
Bulk acoustic resonator
Capacitive sensing
CMOS-MEMS
Piezoresistive sensing
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Summary:[Display omitted] ► In this study the design, fabrication and characterization of a bulk acoustic mode resonator at VHF band is presented. ► The CMOS-MEMS resonator is fabricated using the polysilicon layer of a standard CMOS technology (AMS 0.35μm). ► The resonator is electrostatically actuated and capacitive transduced operating at 230MHz and enhancement with piezoresistive transduction is provided. This contribution reports the design, fabrication and characterization of a bulk acoustic mode resonator at VHF band using the polysilicon layer of a standard CMOS technology (AMS 0.35μm). The resonator is electrostatically actuated and capacitive transduced operating at 230MHz. A discussion on frequency response enhancement with piezoresistive transduction is provided.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.07.102