Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends

Double-rhombic shaped single Shockley stacking faults (1SSFs) were considered to have a converted threading edge dislocation (TED) on the shallower side of the initial basal plane dislocation segments. However, the structural analysis using transmission electron microscopy (TEM) revealed other possi...

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Bibliographic Details
Published inMaterials science forum Vol. 1062; pp. 258 - 262
Main Authors Nishio, Johji, Ota, Chiharu, Iijima, Ryosuke
Format Journal Article
LanguageEnglish
Published Trans Tech Publications Ltd 31.05.2022
Subjects
Single Shockley Stacking Fault
Transmission Electron Microscopy
UV illumination
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Summary:Double-rhombic shaped single Shockley stacking faults (1SSFs) were considered to have a converted threading edge dislocation (TED) on the shallower side of the initial basal plane dislocation segments. However, the structural analysis using transmission electron microscopy (TEM) revealed other possible configuration of the double-rhombic 1SSFs expanded from basal plane dislocations (BPDs) of which both ends were connected with two TEDs.
Bibliography:Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), October 24-28, 2021, Tours, France
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-6410dm