SEE sensitivity of a COTS GaN transistor and silicon MOSFETs

Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to cumulated dose effects. However, only few studies have been done to evaluate their sensitivity to single event effects (SEE). This paper reports SEE test results on a commercial GaN high electron mobility transist...

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Bibliographic Details
Published in2007 9th European Conference on Radiation and Its Effects on Components and Systems pp. 1 - 5
Main Authors Bazzoli, S., Girard, S., Ferlet-Cavrois, V., Baggio, J., Paillet, P., Duhamel, O.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2007
Subjects
Aluminum gallium nitride
Gallium nitride
GaN
HEMTs
HFET
Iron
MODFETs
MOSFET
MOSFETs
Neutrons
Prototypes
Silicon
Single Event Burnout
Single Event Effect
Single Event Gate Rupture
Testing
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Summary:Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to cumulated dose effects. However, only few studies have been done to evaluate their sensitivity to single event effects (SEE). This paper reports SEE test results on a commercial GaN high electron mobility transistor with 14 MeV neutron and heavy ion irradiations (N, Fe, Br, Xe). Results show that the component under test is not sensitive to single event burnout (SEB), however phenomenon similar to single event gate rupture (SEGR) was observed. The SEE test bench used for our experiments has been validated with measurement of SEB and SEGR on MOSFETs.
ISBN:9781424417049
142441704X
ISSN:0379-6566
DOI:10.1109/RADECS.2007.5205553