A novel high performance enhanced-planar IGBT with P-type buried layer

• Published in: 2013 International Conference on Communications, Circuits and Systems (ICCCAS) Vol. 1; pp. 327 - 330
• Main Authors: Jinping Zhang, Xiaojun Xia, Zehong Li, Wei Li, Yadong Shan, Min Ren, Bo Zhang, Zhaoji Li
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2013
• Subjects: Charge carrier density; Doping; Electric fields; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Power semiconductor devices
• DOI: 10.1109/ICCCAS.2013.6765244

A novel high performance enhanced-planar IGBT with p-type buried layer (PBL-EPIGBT) is proposed in this paper. The p-type buried layer (PBL) is placed outside the n-type carrier stored (N-CS) layer and encompasses it partially. Compatible with the conventional EPIGBT technology, the PBL of the proposed structure can be formed by ion implantation and diffusion before the formation of the N-CS layer. Since additional bulk electric field modulation introduced from the charges in the PBL, the negative impact of the positive charges in the N-CS layer on the breakdown voltage (BV) is addressed effectively. The proposed structure breaks the limitation of the doping concentration of the N-CS layer (N N-CS ) on the BV and hence, a higher N N-CS can be used for the proposed PBL-EPIGBT structure with almost constant BV. As a result, in comparison with the conventional EPIGBT without a PBL, the novel structure offers not only high BV, but also improved E off -V ce(on) trade-off characteristics.