A novel high performance enhanced-planar IGBT with P-type buried layer

A novel high performance enhanced-planar IGBT with p-type buried layer (PBL-EPIGBT) is proposed in this paper. The p-type buried layer (PBL) is placed outside the n-type carrier stored (N-CS) layer and encompasses it partially. Compatible with the conventional EPIGBT technology, the PBL of the propo...

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Bibliographic Details
Published in2013 International Conference on Communications, Circuits and Systems (ICCCAS) Vol. 1; pp. 327 - 330
Main Authors Jinping Zhang, Xiaojun Xia, Zehong Li, Wei Li, Yadong Shan, Min Ren, Bo Zhang, Zhaoji Li
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2013
Subjects
Charge carrier density
Doping
Electric fields
Insulated gate bipolar transistors
Logic gates
Performance evaluation
Power semiconductor devices
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Summary:A novel high performance enhanced-planar IGBT with p-type buried layer (PBL-EPIGBT) is proposed in this paper. The p-type buried layer (PBL) is placed outside the n-type carrier stored (N-CS) layer and encompasses it partially. Compatible with the conventional EPIGBT technology, the PBL of the proposed structure can be formed by ion implantation and diffusion before the formation of the N-CS layer. Since additional bulk electric field modulation introduced from the charges in the PBL, the negative impact of the positive charges in the N-CS layer on the breakdown voltage (BV) is addressed effectively. The proposed structure breaks the limitation of the doping concentration of the N-CS layer (N N-CS ) on the BV and hence, a higher N N-CS can be used for the proposed PBL-EPIGBT structure with almost constant BV. As a result, in comparison with the conventional EPIGBT without a PBL, the novel structure offers not only high BV, but also improved E off -V ce(on) trade-off characteristics.
DOI:10.1109/ICCCAS.2013.6765244