Charge storage effect in SiC trench MOSFET with a floating p-shield and its impact on dynamic performances

A p-shield region under the gate trench is typically adopted in a SiC trench MOSFET for achieving lower oxide field and C rss . In this work, we comprehensively studied the impact of a floating termination at the p-shield region on device performance. The SiC trench MOSFET's internal dynamics i...

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Published in2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) pp. 387 - 390
Main Authors Jin Wei, Meng Zhang, Huaping Jiang, Hanxing Wang, Chen, Kevin J.
Format Conference Proceeding
LanguageEnglish
Published IEEJ 01.05.2017
Subjects
C rss
charge storage
dynamic Ron
floating p-shield
Hafnium
oxide field
SiC French MOSFET
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Summary:A p-shield region under the gate trench is typically adopted in a SiC trench MOSFET for achieving lower oxide field and C rss . In this work, we comprehensively studied the impact of a floating termination at the p-shield region on device performance. The SiC trench MOSFET's internal dynamics is revealed with numerical simulations. It is found that a lloating p-shield can effectively reduce the OFF-state electric-field in the bottom gate oxide of a SiC trench MOSFET without degrading its static performance. However, during switching operation, holes would be emitted out of the floating p-shield which then becomes a region that stores negative charges. The charge storage effect could then dramatically elevate the ON-state oxide field after the device is switched from the OFF-state, and also result in slower switching speed. The stored negative charges would also narrow the ON-state current path, and consequently, the dynamic äon would be degraded.
ISBN:488686094X
9784886860941
ISSN:1946-0201
DOI:10.23919/ISPSD.2017.7988985