Low‐Temperature Growth of 3 C  ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material

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Published inJournal of the Electrochemical Society Vol. 139; no. 12; pp. 3565 - 3571
Main Authors Takahashi, Koji, Nishino, Shigehiro, Saraie, Junji
Format Journal Article
LanguageEnglish
Japanese
Published 01.12.1992
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Author Saraie, Junji
Takahashi, Koji
Nishino, Shigehiro
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  givenname: Shigehiro
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  fullname: Nishino, Shigehiro
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  givenname: Junji
  surname: Saraie
  fullname: Saraie, Junji
  organization: Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo‐ku, Kyoto 606, Japan
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Title Low‐Temperature Growth of 3 C  ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material
Volume 139
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