Low‐Temperature Growth of 3 C  ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 139; no. 12; pp. 3565 - 3571
Main Authors Takahashi, Koji, Nishino, Shigehiro, Saraie, Junji
Format Journal Article
LanguageEnglish
Japanese
Published 01.12.1992
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.2069122