Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy

• Published in: ECS transactions Vol. 109; no. 4; pp. 351 - 357
• Main Authors: Yokogawa, Ryo, Chen, Chia-Tsong, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi, Ogura, Atsushi
• Format: Journal Article
• Language: English; Japanese
• Published: The Electrochemical Society, Inc 30.09.2022
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/10904.0351ecst

We investigated stress evaluation of strained group IV semiconductor devices by oil-immersion Raman spectroscopy. In the oil-immersion Raman spectroscopy the high-numerical-aperture lens gives evaluation of complicated stress states in strained group IV semiconductor devices. As an example of the stress evaluation, a clear stress relaxation of the extremely thin body germanium on insulator (ETB GOI) channels was observed. This behavior indicates that the uniaxial stress is applied into GOI channels by patterning narrow channel. We confirmed that the uniaxial stress is applied into GOI channels by narrow channel patterning at even in ETB GOI channels down to approximately 4 nm by oil-immersion Raman spectroscopy, and stress relaxion (quasi-uniaxial stress) in GOI channels and hole mobility enhancement have good correlation.