Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si[sub 1−x]C[sub x] Epitaxy from Disilane, Trimethylsilane, and Phosphine
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Published in | Journal of the Electrochemical Society Vol. 157; no. 6; p. H699 |
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Main Authors | , |
Format | Journal Article |
Language | English Japanese |
Published |
2010
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Online Access | Get full text |
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ISSN: | 0013-4651 |
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DOI: | 10.1149/1.3414167 |