Ultrahigh Vacuum Chemical Vapor Deposition of Doped and Intrinsic Si[sub 1−x]C[sub x] Epitaxy from Disilane, Trimethylsilane, and Phosphine

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 157; no. 6; p. H699
Main Authors Alptekin, Emre, Ozturk, Mehmet C.
Format Journal Article
LanguageEnglish
Japanese
Published 2010
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ISSN:0013-4651
DOI:10.1149/1.3414167