Analysis of Nanoscale Stress in Strained Silicon Materials and Microelectronics Devices by Energy-Filtered Convergent Beam Electron Diffraction

• Published in: ECS transactions Vol. 2; no. 2; pp. 559 - 568
• Main Authors: Zhang, Peng, Istratov, Andrei, He, Haifeng, Ager, Joel, Nelson, Chris, Stach, Eric, Mardinly, John, Kisielowski, Christian, Weber, Eicke, Spence, John
• Format: Journal Article
• Language: English; Japanese
• Published: 28.04.2006
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.2195691

The convergent beam electron diffraction (CBED) technique of transmission electron microscopy (TEM) has excellent capabilities for strain detection at high spatial resolution. Here we report strain measurements in a bulk s-Si/SiGe/Si wafer and in a strained 35nm PMOS device in which SiGe acts as the source and drain. CBED measurements of the composition of the relaxed SiGe buffer are in quantitative agreement with Raman spectroscopy. For the PMOS device, CBED measured a uniaxial compressive stress of 1.12GPa in the channel. However, it was found that even in the cross-sectional TEM samples with thicknesses greater than 300nm, the intrinsic surface strain relaxation was often so severe that no recognizable high-order Laue zone lines in the CBED patterns could be collected. The amorphorization of both free surfaces of the TEM sample to a range of about 80nm is proposed to minimize the impact of surface strain relaxation for future study.