Resistance Switching Effect in Octahedral framework oxide

• Published in: Materials and devices : an international scientific journal Vol. 5; no. 2
• Main Authors: Gagou, Y., Allouche, B., Saint-Gregoire, P., El Marssi, M.
• Format: Journal Article
• Language: English
• Published: Collaborating Academics – International Press 14.01.2021; Collaborating Academics IP
• Subjects: Physics
• ISSN: 2495-3911; 2495-3911
• DOI: 10.23647/ca.md20200109

Resistive Random-Access Memories (ReRAM) are an alternative way to create new memory devices. This is physically possible due to the existence in the material, of two resistive states clearly discreditable, as a function of voltage value and polarity first parameter under control to pass from one state to another one. However, the mechanism of the resistance switching is not simple and is under debate. We present in the present chapter all the factors entering in the switching process in tetragonal tungsten bronze (TTB) type structure oxide thin films deposited by PLD technique onto MgO or STO substrates. Results show that GdK2Nb5O15 (GKN) thin films deposited on MgO and STO substrates are resistively switchable. It was found that the nature of the substrate strongly affects the resistance ratio: GKN on SRO/LSCO/MgO showed a large hysteresis compared to GKN on SRO/STO. Substrate effect and oxygen vacancy on resistance switching in GKN thin film were studied in the same experimental conditions. The study of resistance switching in the GKN/MgO and GKN/STO thin films has confirmed that for low voltages, below the threshold value of 1.3 V, the electric transport is dominated by the formation of a Schottky type barrier, which allows a minimum leakage current. Resistance switching in GKN is attributed to the oxygen vacancies migration which can be controlled by the substrate or the frequency sweep.