Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation

The channel carrier mobility in commercially available 4H-SiC MOSFETs with NO annealed gate oxides is still far below the theoretical limit. It has been suggested that the main reason is high density of very fast interface traps, labeled NI, located inside the oxide very close to the SiC conduction...

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Bibliographic Details
Published inMaterials science forum Vol. 1090; pp. 101 - 105
Main Authors Sveinbjörnsson, E.Ö., Haasmann, Daniel, Dimitrijev, Sima, Vidarsson, Arnar Mar
Format Journal Article
LanguageEnglish
Published Trans Tech Publications Ltd 31.05.2023
Subjects
Interface Characterization
Conductance Spectroscopy
Silicon Carbide
Interface Traps
Capacitance Voltage
MOS Capacitor
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Summary:The channel carrier mobility in commercially available 4H-SiC MOSFETs with NO annealed gate oxides is still far below the theoretical limit. It has been suggested that the main reason is high density of very fast interface traps, labeled NI, located inside the oxide very close to the SiC conduction band edge. The NI traps are usually not observed at room temperature but can be detected at cryogenic temperatures. In this study we use conductance spectroscopy and high-low CV analysis of MOS-capacitors at cryogenic temperatures to show that the very fast NI traps are practically absent in oxides grown using sodium enhanced oxidation.
Bibliography:Special topic volume with invited peer-reviewed papers only
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-9v5b6v