A low insertion loss and low Vπ InP IQ modulator for advanced modulation formats

We demonstrate a high performance chip-on-carrier IQ modulator based on InP MQW technology. The device achieved a 3-dB bandwidth of 40 GHz, a V π of 2.2 V and an insertion loss of <;6.5 dB over the C-band.

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Bibliographic Details
Published in2014 The European Conference on Optical Communication (ECOC) pp. 1 - 3
Main Authors Rouvalis, Efthymios, Metzger, Christiene, Charpentier, Andre, Ayling, Tim, Schmid, Steffen, Gruner, Marko, Hoffmann, Detlef, Hamacher, Michael, Fiol, Gerrit, Schell, Martin
Format Conference Proceeding
LanguageEnglish
Published Systematic Paris Region Systems and ICT Cluster 01.09.2014
Subjects
Insertion loss
Optical losses
Optical modulation
Optical variables measurement
Semiconductor device measurement
Wavelength measurement
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Summary:We demonstrate a high performance chip-on-carrier IQ modulator based on InP MQW technology. The device achieved a 3-dB bandwidth of 40 GHz, a V π of 2.2 V and an insertion loss of <;6.5 dB over the C-band.
ISSN:1550-381X
DOI:10.1109/ECOC.2014.6963833