Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs
Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight."...
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Published in | 2016 IEEE International Conference on Rebooting Computing (ICRC) pp. 1 - 8 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
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IEEE
01.10.2016
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Abstract | Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight." This allows the all-important multiply-accumulate operation within these algorithms to be performed efficiently at the weight data. |
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AbstractList | Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight." This allows the all-important multiply-accumulate operation within these algorithms to be performed efficiently at the weight data. |
Author | Sanches, Lucas L. Hyunsang Hwang Kibong Moon Shelby, Robert M. Narayanan, Pritish Fumarola, Alessandro Burr, Geoffrey W. Sidler, Severin Junwoo Jang |
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Snippet | Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM... |
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SubjectTerms | Neural networks Neurons Nonvolatile memory Performance evaluation Phase change materials Phase change memory Training |
Title | Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs |
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