Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs

Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight."...

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Bibliographic Details
Published in2016 IEEE International Conference on Rebooting Computing (ICRC) pp. 1 - 8
Main Authors Fumarola, Alessandro, Narayanan, Pritish, Sanches, Lucas L., Sidler, Severin, Junwoo Jang, Kibong Moon, Shelby, Robert M., Hyunsang Hwang, Burr, Geoffrey W.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2016
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Summary:Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight." This allows the all-important multiply-accumulate operation within these algorithms to be performed efficiently at the weight data.
DOI:10.1109/ICRC.2016.7738684