Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs
Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight."...
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Published in | 2016 IEEE International Conference on Rebooting Computing (ICRC) pp. 1 - 8 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic "weight." This allows the all-important multiply-accumulate operation within these algorithms to be performed efficiently at the weight data. |
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DOI: | 10.1109/ICRC.2016.7738684 |