Analysis of temperature dependence of Si-Ge HBT

In this paper the dependence of characteristics of SiGe heterojunction bipolar transistors on Ge mole-fraction and also variation of gain with temperature are presented. The simulation is carried out using a two dimensional device simulator, BISOF, based on finite element method. It is observed that...

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Bibliographic Details
Published inProceedings of the 8th International Conference on VLSI Design pp. 268 - 271
Main Authors Krishna, G.H.R., Aditya, A.K., Chakrabarti, N.B., Banerjee, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Doping
Equations
Finite element methods
Germanium silicon alloys
Heterojunction bipolar transistors
Ohmic contacts
Silicon alloys
Silicon germanium
Temperature dependence
Voltage control
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Summary:In this paper the dependence of characteristics of SiGe heterojunction bipolar transistors on Ge mole-fraction and also variation of gain with temperature are presented. The simulation is carried out using a two dimensional device simulator, BISOF, based on finite element method. It is observed that the current gain of graded HBT improves when the temperature falls from 300 K to 200 K which matches well with the available experimental results.
ISBN:9780818669057
0818669055
ISSN:1063-9667
2380-6923
DOI:10.1109/ICVD.1995.512122