High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped Gate Dielectric

• Published in: IEEE electron device letters Vol. 35; no. 5; pp. 554 - 556
• Main Authors: Gao, Yana, Li, Xifeng, Chen, Longlong, Shi, Jifeng, Sun, Xiao Wei, Zhang, Jianhua
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Al-doped ZrO; amorphrous; Annealing; Dielectric constant; high mobility; Indium tin oxide; Logic gates; solution; Substrates; thin film transistor (TFT); Transistors; high mobility; solution; Al-doped {\rm ZrO}_{2}; thin film transistor (TFT); amorphrous
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2014.2310120

In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO 2 (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 °C and had a smooth surface with root-mean-square roughness of <;0.35 nm. The relative dielectric constant of AZO thin film annealed at 400 °C is 19.67. And HIZO TFTs with AZO gate oxide exhibited a high saturation field-effect mobility of 18.1 cm 2 /Vs, a small subthreshold swing of 0.4 V/decade, and a high ON/OFF ratio of 10 7 , which can satisfy the backplate requirements for flat panel displays.