Measurements for Superjunction MOSFETs: Limitations and Opportunities

Small-signal measurements of output capacitance (<inline-formula> <tex-math notation="LaTeX">{C_{\textsf {OSS}}} </tex-math></inline-formula>) are ubiquitous in power semiconductor datasheets and determine critical features of power converters. For silicon superjunc...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 66; no. 1; pp. 578 - 584
Main Authors Zulauf, Grayson D., Roig-Guitart, Jaume, Plummer, James D., Rivas-Davila, Juan M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:Small-signal measurements of output capacitance (<inline-formula> <tex-math notation="LaTeX">{C_{\textsf {OSS}}} </tex-math></inline-formula>) are ubiquitous in power semiconductor datasheets and determine critical features of power converters. For silicon superjunction power MOSFETs (SJs), we report <inline-formula> <tex-math notation="LaTeX">{C_{\textsf {OSS}}} </tex-math></inline-formula> measurements with two key anomalies: variation with ac perturbation frequency and hysteresis with dc sweep direction. Using mixed-mode simulations, we attribute the frequency shift to the fundamental SJ structure and find that dc hysteresis is caused by charge trapping from uneven depletion fronts. We show that <inline-formula> <tex-math notation="LaTeX">{C_{\textsf {OSS}}} </tex-math></inline-formula> measurements on SJs do not accurately characterize large-signal operation, underestimating stored energy by up to four times and giving no indication of <inline-formula> <tex-math notation="LaTeX">{C_{\textsf {OSS}}} </tex-math></inline-formula> losses.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2880952