Ohmic contacts to n-GaAs with Germanide overlayers

This paper reports a sintered ohmic contact to n type GaAs. The ohmic contact formation occurs by simultaneous synthesis of molybdenum germanide as a contacting metallurgy and a shallow n + type region formed in GaAs by germanium diffusion. Contact resistances of low 10 -6 ω.cm 2 can be obtained on...

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Bibliographic Details
Published in1983 International Electron Devices Meeting pp. 115 - 118
Main Authors Tiwari, S., Tung-Sheng Kuan, Tierney, E.
Format Conference Proceeding
LanguageEnglish
Published IRE 1983
Subjects
Contact resistance
Degradation
Doping
Gallium arsenide
Germanium
Ohmic contacts
Stability
Stress
Surface morphology
Temperature distribution
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Summary:This paper reports a sintered ohmic contact to n type GaAs. The ohmic contact formation occurs by simultaneous synthesis of molybdenum germanide as a contacting metallurgy and a shallow n + type region formed in GaAs by germanium diffusion. Contact resistances of low 10 -6 ω.cm 2 can be obtained on ion implanted n type GaAs with surface layers of peak doping in the 10 17 cm -3 range. The contacts are formed at 750° C under arsenic overpressure. The contacts formed are smooth and uniform in morphology. The degradation under temperature and time stress is found to be pronounced above 350° C at times longer than 3 hours with contact resistances in the high 10 -5 ω.cm 2 range after 14 hours. The system exhibits comparable contact resistance, smoother morphology and a better temperature stability than the commonly used alloyed AuGe system.
DOI:10.1109/IEDM.1983.190454