Impact of Applied Temperature and Hydrostatic Pressure on the Off-Center Donor Spectrum in Spherical Quantum Dot

• Published in: Solid state phenomena Vol. 335; pp. 31 - 41
• Main Authors: Boussetta, Reda, Hbibi, Mohammed, Falyouni, Farid, Belamkadem, Laaziz, El Moussaouy, Abdelaaziz, El Hadi, Mohamed, Mommadi, Omar, Chouef, Soufiane, Vinasco, Juan Alejandro, Duque, Carlos Alberto
• Format: Journal Article
• Language: English
• Published: Zurich Trans Tech Publications Ltd 29.07.2022
• Subjects: Binding energy; Electronic properties; Finite difference method; Hydrostatic pressure; Impurities; Mathematical analysis; Nanostructure; Pressure effects; Quantum dots; Temperature effects; Spherical Quantum Dot; Temperature; Hydrostatic Pressure; Donor Atom
• ISSN: 1012-0394; 1662-9779; 1662-9779
• DOI: 10.4028/p-6h7el8

Within the effective mass approximation and the infinite confinement potential, this work focused on studying the electronic properties of spherical quantum dot (SQD) nanostructure through the finite difference method. The effects of shallow donor impurity position, temperature (T), and hydrostatic pressure (P) on the binding energy, the electron spatial extension and the average electron-impurity distance <rD-e> in a SQD have been evaluated. Our findings show that the binding energy increases as a function of hydrostatic pressure and decreases with the temperature effect. However, the binding energy presents very clear maximum around the spherical nanostructure center depending on the impurity position. For higher SQD, the impact of externals perturbations (P and T) on the electron spatial extension are more significant. The distance decreases with the augmentation of hydrostatic pressure when the impurity is near the center, which is conversely when the impurity is near the edge. In addition, applying the hydrostatic pressure and temperature leads to decreasing and increasing the average distance <rD-e>, respectively.