Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al 2 O 3 layer in TiN\HfO 2 \Hf\TiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric...

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Bibliographic Details
Published in2012 Symposium on VLSI Technology (VLSIT) pp. 159 - 160
Main Authors Goux, L., Fantini, A., Kar, G., Chen, Y., Jossart, N., Degraeve, R., Clima, S., Govoreanu, B., Lorenzo, G., Pourtois, G., Wouters, D. J., Kittl, J. A., Altimime, L., Jurczak, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2012
Subjects
Aluminum oxide
Hafnium compounds
Resistance
Switches
Tin
Tuning
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Summary:We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al 2 O 3 layer in TiN\HfO 2 \Hf\TiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) `natural' (asymmetry-induced) reset switching takes place close to the TiN anode; (iv) reset resistance is limited by material-barrier properties at TiN interface.
ISBN:9781467308465
1467308463
ISSN:0743-1562
DOI:10.1109/VLSIT.2012.6242510