Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3
Results of switching behavior of the improper ferroelectric LuFeO are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principle...
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Published in | Advanced materials (Weinheim) Vol. 32; no. 23; p. e2000508 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Germany
Wiley
29.04.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Results of switching behavior of the improper ferroelectric LuFeO
are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO
. It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics. |
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Bibliography: | National Science Foundation (NSF) AC02-05CH11231; SC‐0012375; DMR‐1708615; 88881.119454/2016‐01; 231430 USDOE Office of Science (SC), Basic Energy Sciences (BES) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior Research Council of Norway |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.202000508 |