Defect-Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3

Results of switching behavior of the improper ferroelectric LuFeO are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principle...

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Published inAdvanced materials (Weinheim) Vol. 32; no. 23; p. e2000508
Main Authors Barrozo, Petrucio, Småbråten, Didrik René, Tang, Yun-Long, Prasad, Bhagwati, Saremi, Sahar, Ozgur, Rustem, Thakare, Vishal, Steinhardt, Rachel A, Holtz, Megan E, Stoica, Vladimir Alexandru, Martin, Lane W, Schlom, Darrel G, Selbach, Sverre Magnus, Ramesh, Ramamoorthy
Format Journal Article
LanguageEnglish
Published Germany Wiley 29.04.2020
Subjects
ferroelectricity
h‐LFO
LuFeO3
MATERIALS SCIENCE
multiferroics
LuFeO 3
multiferroics
ferroelectricity
h-LFO
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Summary:Results of switching behavior of the improper ferroelectric LuFeO are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.
Bibliography:National Science Foundation (NSF)
AC02-05CH11231; SC‐0012375; DMR‐1708615; 88881.119454/2016‐01; 231430
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Research Council of Norway
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202000508