Crystal Structure, Piezoelectric and Dielectric Properties of (Li, Ce)4+, Nb5+ and Mn2+ Co-doped CaBi4Ti4O15 High-Temperature Ceramics

• Published in: Journal of electronic materials Vol. 45; no. 7; pp. 3597 - 3602
• Main Authors: Xin, Deqiong, Chen, Qiang, Wu, Jiagang, Bao, Shaoming, Zhang, Wen, Xiao, Dingquan, Zhu, Jianguo
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.07.2016
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Solid State Physics; Bismuth layer structure ferroelectric; dielectric property; piezoelectric property; CBT ceramics
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-016-4554-x

Bismuth-layered structured ceramics Ca 0.85 (Li,Ce) 0.075 Bi 4 Ti 4− x Nb x O 15 -0.01MnCO 3 were prepared by the conventional solid-state reaction method. The evolution of microstructure and corresponding electrical properties were studied. All the samples presented a single bismuth layered-structural phase with m  = 4, indicating that (Li, Ce) 4+ , Nb 5+ and Mn 2+ adequately enter into the pseudo-perovskite structure and form solid solutions. It was found that Ca 0.85 (Li,Ce) 0.075 Bi 4 Ti 3.98 Nb 0.02 O 15 -0.01MnCO 3 (CBTLCM-0.02Nb) ceramics possess the optimum electrical properties. The piezoelectric coefficient d 33 , dielectric constant ε r , loss tan δ , planar electromechanical coupling factor k p and Curie-temperature T C of CBTLCM-0.02Nb ceramics were found to be ∼19.6 pC/N, 160, 0.16%, 8.1% and 767°C, respectively. Furthermore, the thermal depoling behavior demonstrates that the d 33 value of x  = 0.02 content remains at 16.8 pC/N after annealing at 500°C. These results suggest that the (Li, Ce) 4+ -, Nb 5+ - and Mn 2+ -doped CBT-based ceramics are promising candidates for high-temperature piezoelectric applications.