Radial Nanowire Light-Emitting Diodes in the (Al x Ga 1– x ) y In 1– y P Material System

Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active l...

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Bibliographic Details
Published inNano letters Vol. 16; no. 1; pp. 656 - 662
Main Authors Berg, Alexander, Yazdi, Sadegh, Nowzari, Ali, Storm, Kristian, Jain, Vishal, Vainorius, Neimantas, Samuelson, Lars, Wagner, Jakob B., Borgström, Magnus T.
Format Journal Article
LanguageEnglish
Published 13.01.2016
Subjects
light-emitting diodes
MOCVD
Nanowire
quantum well
radial
STEM-EDX
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Summary:Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum. © 2015 American Chemical Society.
ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.5b04401