Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]

This paper is about the correction of the paper about AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications.

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Bibliographic Details
Published inIEEE electron device letters Vol. 38; no. 1; p. 149
Main Authors Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Format Journal Article
LanguageEnglish
Published IEEE 01.01.2017
Subjects
Aluminum gallium nitride
Etching
Gallium nitride
HEMTs
III-V semiconductor materials
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Summary:This paper is about the correction of the paper about AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2634606