A two-stack, multi-color In0.5Ga0.5As/GaAs and lnAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection

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Bibliographic Details
Published inInfrared physics & technology Vol. 46; no. 3; pp. 249 - 256
Main Authors LIN JIANG, LI, Sheng S, LIU, W.-S, YEH, N.-T, CHYI, J.-I
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 2005
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Photodetectors (including infrared and CCD detectors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ternary compound
Atomic force microscopy
Binary compound
Gallium arsenides
Quantum dot
Infrared detector
Theoretical study
Experimental study
Photodetector
Indium arsenides
Far infrared radiation
Semiconductor device
Indium Gallium Arsenides
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ISSN:1350-4495
1879-0275
DOI:10.1016/j.infrared.2004.04.003