Ferroelectric Switching: Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low‐Power Neuromorphic In‐Memory Computing (Adv. Mater. 21/2021)

In article number 2008709, Zhigang Ji, Lain‐Jong Li, Jr‐Hau He, Xixiang Zhang, and co‐workers use ferroelectric switching in the van der Waals ferroelectric α‐In2Se3 to increase the on/off ratio of heterosynaptic devices to over 103. The state‐of‐the‐art devices can fulfil in‐memory computing with u...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 33; no. 21
Main Authors Xue, Fei, He, Xin, Wang, Zhenyu, Retamal, José Ramón Durán, Chai, Zheng, Jing, Lingling, Zhang, Chenhui, Fang, Hui, Chai, Yang, Jiang, Tao, Zhang, Weidong, Alshareef, Husam N., Ji, Zhigang, Li, Lain‐Jong, He, Jr‐Hau, Zhang, Xixiang
Format Journal Article
LanguageEnglish
Published 27.05.2021
Subjects
heterosynaptic plasticity
in‐memory computing
neuromorphic computing
van der Waals ferroelectric
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Summary:In article number 2008709, Zhigang Ji, Lain‐Jong Li, Jr‐Hau He, Xixiang Zhang, and co‐workers use ferroelectric switching in the van der Waals ferroelectric α‐In2Se3 to increase the on/off ratio of heterosynaptic devices to over 103. The state‐of‐the‐art devices can fulfil in‐memory computing with ultralow operation currents and also realize high accuracy of pattern recognition with both supervised and unsupervised learning in simulated neural networks.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202170167