Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics (Phys. Status Solidi A 9∕2018)

Quantum Dots In article number 1700630, Kang Gao and co‐workers present the first measurement of the emission lifetime of single photon emission from a GaN fluctuation quantum dot (whilst simultaneously confirming the single photon nature of the emission). The experiment, based on measuring the time...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 215; no. 9
Main Authors Gao, Kang, Holmes, Mark, Arita, Munetaka, Arakawa, Yasuhiko
Format Journal Article
LanguageEnglish
Published 09.05.2018
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Summary:Quantum Dots In article number 1700630, Kang Gao and co‐workers present the first measurement of the emission lifetime of single photon emission from a GaN fluctuation quantum dot (whilst simultaneously confirming the single photon nature of the emission). The experiment, based on measuring the time delay between individually emitted photons under continuous wave excitation, also provides information on the reason for the relatively narrow line widths of these novel nitride quantum dots. The image itself shows the emission of single photons from a GaN quantum dot, and the overlaid figures show the anti bunching measurement, and a corresponding emission lifetime measurement from the anti bunching data.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201870017